Reference SAW oscillator on quartz-on-silicon (QoS) wafer for polylithic integration of true single chip radio

Author

Eo, Yunseong ; Hyun, Seokbong ; Lee, Kwyro ; Oh, Gilhwan ; Lee, Joong-Won

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

21

Issue

8

fYear

2000

Firstpage

393

Lastpage

395

Abstract

The authors present an electro-acoustic circuit fabricated on quartz directly bonded on the processed silicon wafer (QoS), which allows us to polylithically integrate high precision passives with integrated circuits. We first fabricated a prototype SAW resonator and oscillator on thick QoS. The SAW resonator on QoS shows Q about 10,000 and 11 dB insertion loss at 289 MHz, and SAW oscillator on QoS shows phase noise of as small as -120 dBc at 100 kHz offset, demonstrating the feasibility of true single chip radio.

Keywords

Q-factor; integrated circuits; phase noise; quartz; radio receivers; silicon; surface acoustic wave oscillators; surface acoustic wave resonators; wafer bonding; SAW resonator; Si; SiO/sub 2/; electro-acoustic circuit; high precision passives; integrated circuits; phase noise; polylithic integration; processed Si wafer; quartz-on-silicon wafer; reference SAW oscillator; single chip radio; Dielectrics; Glass; Hafnium; Insertion loss; Oscillators; Phase noise; Prototypes; Silicon; Surface acoustic waves; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.852961

Filename

852961