Damage engineered Se implant for NMOS TiSix contact resistivity reduction

Author

Rao, K.V. ; Khaja, F.A. ; Ni, C.N. ; Sharma, Shantanu ; Zheng, Bao ; Ramalingam, J. ; Gelatos, J. ; Lei, Jianjun ; Mayur, A. ; Hung, R. ; Banthia, V. ; Brand, A. ; Variam, N.

Author_Institution

Varian Semicond. Equip., Appl. Mater., Inc., Gloucester, MA, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

3

Abstract

Low specific contact resistivity (7E-9 Ohm.cm²) was achieved for contacts with TiSi_x to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSi_x/Si:P interface, to realize the SBH-lowering benefits of Se.

Keywords

CMOS integrated circuits; annealing; contact resistance; elemental semiconductors; ion implantation; phosphorus; selenium; silicon; titanium compounds; CMOS performance scaling; NMOS contact resistivity reduction; Se; Si:P; TiSi_x; damage engineered selenium implant; implant energy optimization; in-situ epitaxially doped n-SD regions; low specific contact resistivity; millisecond laser annealling; Annealing; Contacts; Implants; Metals; Silicides; Silicon; 14nm; CMOS; Contact Resistivity; Se Implant; Titanium Silicide; millisecond laser anneal; n-SD;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939955

Filename

6939955