Title :
660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier
Author :
Pezeshki, B. ; Osinski, J.S. ; Zelinski, M. ; O´Brien, S. ; Mathur, A.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
7/17/1997 12:00:00 AM
Abstract :
The first monolithically integrated master oscillator power amplifier is reported in the GaInP/AlInP material system. A distributed Bragg reflector forms the master oscillator, and a flared amplifier provides gain. The device provides 250 mW of single frequency and single spatial mode power at 664 nm
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; power amplifiers; semiconductor lasers; 250 mW; 630 to 680 nm; 660 nm; GaInP-AlInP; distributed Bragg reflector; flared amplifier; master oscillator; monolithically integrated oscillator/amplifier; power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970892
