Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study

Author

Toyoda, Noriaki ; Kimura, Akihiro ; Yamada, Isao

Author_Institution

Grad. Sch. of Eng., Univ. of Hyogo, Himeji, Japan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

3

Abstract

Gas cluster ion beams (GCIB) were used for surface modification of amorphous carbon (a-C) or tetrahedral carbon (ta-C) films, and in-vacuum XPS and near edge X-ray absorption fine structure (NEXAFS) measurements were carried out for evaluation of sp2/sp3 ratio. Since GCIB deposit its kinetic energy at local area, it leads to formation of high energy density state on surface. From XPS analysis, it was shown that sp3 contents in carbon films increased with increasing acceleration voltage (V_a) and it showed highest value at V_a of 10 kV. NEXAFS measurements also showed decrease of sp2 content at V_a of 10 kV. GCIB irradiations can assist to form sp3 rich layer on amorphous carbon surface.

Keywords

EXAFS; X-ray photoelectron spectra; XANES; amorphous state; carbon; ion beam applications; surface treatment; thin films; C; GCIB deposit; GCIB irradiations; NEXAFS; acceleration voltage; amorphous carbon films; amorphous carbon surface; gas cluster ion beam bombardments; high energy density state; in-vacuum XPS; kinetic energy; near edge X-ray absorption fine structure; sp2 content; sp2-sp3 ratio; sp3 content; sp3 rich layer; surface modification; tetrahedral carbon films; Acceleration; Carbon; Diamond-like carbon; Films; Ion beams; Radiation effects; Surface treatment; NEXAFS; XPS; amorphous carbon; gas cluster ion beam;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939967

Filename

6939967