Title :
Minimization of wiring inductance in high power IGBT inverter
Author :
Lounis, Z. ; Rasoanarivo, I. ; Davat, B.
Author_Institution :
Groupe de Recherches en Electron. et Electrotech., Inst. Nat. Polytech. de Lorraine, France
fDate :
4/1/2000 12:00:00 AM
Abstract :
The wiring inductance is one of main causes limiting the use of the inverter in hard commutation mode, particularly when voltage, current and switching frequency are increased. The busbar technology is the means that allows one to reach low wiring inductance between DC source and power switches in spite of relatively long connections. This paper deals with studies of busbar structure applied to the high power inverters in order to improve their performances. Two structures of wiring are tested; the traditional one and busbar technology. Experimental and simulation results show that this last technique permits to obtain very low wiring inductance so that no snubber circuits are needed
Keywords :
DC-AC power convertors; busbars; inductance; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; switching circuits; wiring; DC source; busbar technology; hard commutation mode; high-power IGBT inverter; performance improvement; power switches; switching frequency; wiring inductance minimisation; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Inverters; Minimization; Snubbers; Switching frequency; Voltage; Wiring;
Journal_Title :
Power Delivery, IEEE Transactions on