Title :
Influence of implantation temperature on the formation of hydrogen-related defects in InP
Author :
Luce, F.P. ; Reboh, S. ; Vilain, E. ; Madeira, F. ; Barnes, Jean-Paul ; Rochat, N. ; Salvetat, T. ; Tauzin, A. ; Milesi, F. ; Mazen, F. ; Deguet, C.
Author_Institution :
LETI, CEA, Grenoble, France
fDate :
June 26 2014-July 4 2014
Abstract :
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.
Keywords :
Fourier transform spectra; III-V semiconductors; annealing; fracture; indium compounds; infrared spectra; ion implantation; optical microscopy; secondary ion mass spectra; semiconductor doping; vacancies (crystal); FTIR; InP lattice; InP:H; SIMS; annealing; efficient H trapping centers; fracture process precursors; hydrogen-related defect formation; implantation temperature; optical microscopy; temperature -15 degC to 230 degC; Annealing; Films; Hydrogen; Indium phosphide; Substrates; Surface treatment; Temperature measurement; InP; damage formation; ion implantation; layer transfer;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939972
