Solar cells doping by beam line and plasma immersion ion implantation

Author

Coig, M. ; Milesi, F. ; Payen, N. ; Reboh, S. ; Mazen, F. ; Lanterne, A. ; Le Perchec, J. ; Gall, S. ; Veschetti, Y.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially we studied the effects of beam line ion implantation, where the dopants were activated by two different annealing routines. The first one used a single annealing to activate both B implanted emitter and P implanted back surface field (BSF), while the second one used two different annealing to separately activate the dopants. Good yield was reached with a record cell of 20.33% efficiency. Secondly, we investigated the doping by plasma immersion ion implantation with final objective of fabricate a solar cell fully doped by plasma.

Keywords

annealing; elemental semiconductors; plasma immersion ion implantation; semiconductor doping; silicon; solar cells; B implanted emitter; BSF; P implanted back surface field; Si; annealing routine; beam line effect; dopant; efficiency 20.33 percent; ion implantation technique; n-type silicon solar cell doping; plasma immersion; Annealing; Doping; Ion implantation; Photovoltaic cells; Plasmas; Resistance; Silicon; beam line ion implantation; doping; plasma immersion ion implantation; silicon solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939976

Filename

6939976