• DocumentCode
    1361170
  • Title

    Frequency Response of Source-Gated Transistors

  • Author

    Shannon, John M. ; Balon, Frantisek

  • Author_Institution
    Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK
  • Volume
    56
  • Issue
    10
  • fYear
    2009
  • Firstpage
    2354
  • Lastpage
    2356
  • Abstract
    A small-signal equivalent circuit is derived for source-gated transistors. For Schottky source barriers, a particularly simple expression is derived for fT which is confirmed using 2-D modeling.
  • Keywords
    field effect transistors; frequency response; thin film transistors; 2D modeling; Schottky source barriers; frequency response; small-signal equivalent circuit; source-gated transistors; Current density; Equivalent circuits; FETs; Feedback; Frequency response; Insulation; Parasitic capacitance; Schottky barriers; Thin film transistors; Transconductance; Voltage; Device modeling; Schottky barrier; field-effect transistor (FET); source-gated transistor (SGT); thin-film transistor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2028047
  • Filename
    5229239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1361170