Title :
Frequency Response of Source-Gated Transistors
Author :
Shannon, John M. ; Balon, Frantisek
Author_Institution :
Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK
Abstract :
A small-signal equivalent circuit is derived for source-gated transistors. For Schottky source barriers, a particularly simple expression is derived for fT which is confirmed using 2-D modeling.
Keywords :
field effect transistors; frequency response; thin film transistors; 2D modeling; Schottky source barriers; frequency response; small-signal equivalent circuit; source-gated transistors; Current density; Equivalent circuits; FETs; Feedback; Frequency response; Insulation; Parasitic capacitance; Schottky barriers; Thin film transistors; Transconductance; Voltage; Device modeling; Schottky barrier; field-effect transistor (FET); source-gated transistor (SGT); thin-film transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2028047
