DocumentCode
136122
Title
Elastomers for control of wafer temperature in the ≈50°C range during high dose ion implantation
Author
Springer, Jeff ; Wriggins, Walt ; Kusterer, Juergen ; Zotter, Karl ; Current, Michael I.
Author_Institution
CORE Syst., Fremont, CA, USA
fYear
2014
fDate
June 26 2014-July 4 2014
Firstpage
1
Lastpage
4
Abstract
Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.
Keywords
elastomers; infrared detectors; ion implantation; temperature control; temperature measurement; IC devices; elastomer materials; gain characteristics; high dose ion implantation; high-power implantation; in-situ IR sensors; wafer temperature control; wafer-pad temperatures; Conductivity; Implants; Temperature distribution; Temperature measurement; Temperature sensors; IR wafer temperature sensing; elastomers; heat transfer; high power implantation;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/IIT.2014.6939983
Filename
6939983
Link To Document