• DocumentCode
    1361300
  • Title

    n-Type Nanocrystalline- \\hbox {FeSi}_{2} /p-Type Si Heterojunction Photodiodes Prepared at Room Temperature

  • Author

    Shaban, Mahmoud ; Kawai, Kenji ; Promros, Nathaporn ; Yoshitake, Tsuyoshi

  • Author_Institution
    Dept. of Electr. Eng., South Valley Univ., Aswan, Egypt
  • Volume
    31
  • Issue
    12
  • fYear
    2010
  • Firstpage
    1428
  • Lastpage
    1430
  • Abstract
    n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current density-voltage (J- V) characteristics of the devices fabricated were investigated in the temperature range of 77-300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7 × 108 cm√Hz/W, which was improved to 1.5 ×1010 cm√Hz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.
  • Keywords
    elemental semiconductors; infrared sources; iron compounds; nanofabrication; nanostructured materials; optical fabrication; p-n heterojunctions; photodiodes; semiconductor growth; silicon; sputter deposition; FeSi2-Si; Si; current density-voltage characteristics; direct-current sputtering method; iron disilicide semiconducting material; large-area optoelectronics; n-type nanocrystalline heterojunction infrared photodiodes; optical fabrication; temperature 77 K to 300 K; wavelength 1.31 mum; Crystals; Current measurement; Heterojunctions; Nanostructured materials; Photodiodes; Temperature distribution; Temperature measurement; Heterojunctions; iron disilicide; photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2078793
  • Filename
    5610704
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1361300