DocumentCode :
1361300
Title :
n-Type Nanocrystalline- 
/p-Type Si Heterojunction Photodiodes Prepared at Room Temperature
Author :
Shaban, Mahmoud ; Kawai, Kenji ; Promros, Nathaporn ; Yoshitake, Tsuyoshi
Author_Institution :
Dept. of Electr. Eng., South Valley Univ., Aswan, Egypt
Volume :
31
Issue :
12
fYear :
2010
Firstpage :
1428
Lastpage :
1430
Abstract :
n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current density-voltage (J- V) characteristics of the devices fabricated were investigated in the temperature range of 77-300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7 × 108 cm√Hz/W, which was improved to 1.5 ×1010 cm√Hz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.
Keywords :
elemental semiconductors; infrared sources; iron compounds; nanofabrication; nanostructured materials; optical fabrication; p-n heterojunctions; photodiodes; semiconductor growth; silicon; sputter deposition; FeSi2-Si; Si; current density-voltage characteristics; direct-current sputtering method; iron disilicide semiconducting material; large-area optoelectronics; n-type nanocrystalline heterojunction infrared photodiodes; optical fabrication; temperature 77 K to 300 K; wavelength 1.31 mum; Crystals; Current measurement; Heterojunctions; Nanostructured materials; Photodiodes; Temperature distribution; Temperature measurement; Heterojunctions; iron disilicide; photodiodes;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2078793
Filename :
5610704
Link To Document :
