Title :
Integrated divergent beam for FinFET Conformal Doping
Author :
Ching-I Li ; Ger-Pin Lin ; Padmanabhan, Regina ; Cai, Gary N. ; Zhimin Wan ; Platow, Wilhelm ; Saadatmand, Kourosh ; Po-Heng Lin ; Chih-Ming Tai ; Ruey-Dar Chang
Author_Institution :
Adv. Ion Beam Technol., Inc., Tainan, Taiwan
fDate :
June 26 2014-July 4 2014
Abstract :
In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.
Keywords :
MOSFET; semiconductor doping; FinFET conformal doping method; IDB arsenic implantation; Monte-Carlo simulation; high concentration; high performance FinFET devices; implant angle distribution; integrated divergent beam; Doping profiles; FinFETs; Implants; Monte Carlo methods; Performance evaluation; Semiconductor process modeling; FinFET; Monte-Carlo simulation; conformal; divergent; ion implant;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939992
