Title :
Silicon-on-sapphire MOSFET transmit/receive switch for L and S band transceiver applications
Author :
Johnson, R.A. ; de la Houssaye, P.R. ; Wood, M.E. ; Garcia, G.A. ; Chang, C.E. ; Asbeck, P.M. ; Lagnado, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
7/17/1997 12:00:00 AM
Abstract :
A single-pole double-throw transmit/receive switch has been fabricated with MOSFETs in silicon-on-sapphire technology. The switch has an insertion loss of 1.7 dB and an isolation of >30 dB at 2.4 GHz. The switch was targeted for 2.4 GHz operation, but is broadband with only a 2.0 dB insertion loss at 5 GHz. The same switch was also fabricated on SIMOX as a comparison. Owing to capacitive losses to the substrate, the SIMOX switch had a much higher insertion loss: 4.9 dB at 2.4 GHz and 6.2 dB at 5 GHz
Keywords :
MOS integrated circuits; UHF integrated circuits; field effect MMIC; field effect transistor switches; mobile radio; sapphire; silicon; transceivers; 1.7 to 2 dB; 2.4 to 5 GHz; L-band; S-band; SHF; SOS MOSFET switch; SPDT T/R switch; Si-Al2O3; UHF; broadband; insertion loss; silicon-on-sapphire technology; single-pole double-throw switch; transceiver applications; transmit/receive switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970898
