Title :
Power semiconductors: Switching lots of watts at high speeds: State-of-the-art development yields solid-state devices capable of handling over 10 million watts
Author :
Baliga, B. Jayant
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
Considers the developments in power electronics placing particular emphasis on power MOSFETs, their properties, design and application advantages over other similar devices. The vertical channel junction field effect transistor, (JFET) is also briefly described and its applications pointed out.
Keywords :
insulated gate field effect transistors; power transistors; JFET; application; design; insulated gate field effect transistors; power MOSFETs; power electronics; power transistors; vertical channel junction field effect transistor; Bipolar transistors; Gallium arsenide; Logic gates; MOSFETs; Switches; Thyristors;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1981.6369702
