• DocumentCode
    1361378
  • Title

    Power semiconductors: Switching lots of watts at high speeds: State-of-the-art development yields solid-state devices capable of handling over 10 million watts

  • Author

    Baliga, B. Jayant

  • Author_Institution
    General Electric Co., Schenectady, NY, USA
  • Volume
    18
  • Issue
    12
  • fYear
    1981
  • Firstpage
    42
  • Lastpage
    48
  • Abstract
    Considers the developments in power electronics placing particular emphasis on power MOSFETs, their properties, design and application advantages over other similar devices. The vertical channel junction field effect transistor, (JFET) is also briefly described and its applications pointed out.
  • Keywords
    insulated gate field effect transistors; power transistors; JFET; application; design; insulated gate field effect transistors; power MOSFETs; power electronics; power transistors; vertical channel junction field effect transistor; Bipolar transistors; Gallium arsenide; Logic gates; MOSFETs; Switches; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1981.6369702
  • Filename
    6369702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1361378