Title :
A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
Author :
Shrivastava, Mayank ; Jain, Ruchil ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Infineon Technol., East Fishkill, NY, USA
Abstract :
We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
Keywords :
MIS devices; electric breakdown; mixed analogue-digital integrated circuits; tunnelling; DeMOS device; band-to-band tunnelling; device failure; dielectric breakdown; drain-extended MOS device; gate oxide reliability; gate-induced drain leakage current; mixed-signal performance; off-state degradation; surface BTBT current; Degradation; Dielectric breakdown; Electrostatic discharge; MOS devices; Reliability; Semiconductor device modeling; Tunneling; Band-to-band tunnelling (BTBT); drain extended; drain-extended MOS (DeMOS); input/output; time-dependent dielectric breakdown (TDDB);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2082549
