Title :
Total ionizing dose effects in high breakdown voltage SOI devices
Author :
Zhongjian Wang ; Xinhong Cheng ; Chao Xia ; Dawei Xu ; Lingyan Shen ; Duo Cao ; Li Zheng ; Qian Wang ; Yu Yuehui
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
fDate :
June 26 2014-July 4 2014
Abstract :
In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by 60Co gamma irradiation under different dose and bias conditions were compared.
Keywords :
gamma-ray effects; insulated gate bipolar transistors; leakage currents; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; silicon-on-insulator; LDMOS; LIGBT; drift region; gamma irradiation; high breakdown voltage SOI devices; lateral insulated insulated gate bipolar transistors; leakage current; threshold voltage shift; total ionizing dose effects; voltage 600 V; Implants; Leakage currents; Logic gates; Radiation effects; Silicon; Silicon-on-insulator; Threshold voltage; LDMOS; LIGBT; SOI; Total ionizing dose (TID);
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940005
