Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

Author

Murakami, Ichiro ; Nakano, Takashi ; Hatano, Keisuke ; Nakashiba, Yasutaka ; Furumiya, Masayuki ; Nagata, Tsuyoshi ; Kawasaki, Toru ; Utsumi, Hiroaki ; Uchiya, Satoshi ; Arai, Kouichi ; Mutoh, Nobuhiko ; Kohno, Akiyoshi ; Teranishi, Nobukazu ; Hokari, Yas

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1566

Lastpage

1572

Abstract

New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p⁺-layer formed at the photodiode surface. The VOD shutter voltage was reduced from 31 to 18 V by using an epitaxially grown substrate with double impurity concentration layers

Keywords

CCD image sensors; antireflection coatings; impurity distribution; photodiodes; 18 V; CCD image sensors; VOD shutter voltage; anti-reflection film; double impurity concentration layers; epitaxially grown substrate; p⁺-layer; photo-sensitivity; photodiode; vertical over-flow-drain; Charge coupled devices; Charge-coupled image sensors; Digital cameras; Image sensors; Impurities; Laboratories; National electric code; Pixel; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853032

Filename

853032