Title :
Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors
Author :
Murakami, Ichiro ; Nakano, Takashi ; Hatano, Keisuke ; Nakashiba, Yasutaka ; Furumiya, Masayuki ; Nagata, Tsuyoshi ; Kawasaki, Toru ; Utsumi, Hiroaki ; Uchiya, Satoshi ; Arai, Kouichi ; Mutoh, Nobuhiko ; Kohno, Akiyoshi ; Teranishi, Nobukazu ; Hokari, Yas
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fDate :
8/1/2000 12:00:00 AM
Abstract :
New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p+-layer formed at the photodiode surface. The VOD shutter voltage was reduced from 31 to 18 V by using an epitaxially grown substrate with double impurity concentration layers
Keywords :
CCD image sensors; antireflection coatings; impurity distribution; photodiodes; 18 V; CCD image sensors; VOD shutter voltage; anti-reflection film; double impurity concentration layers; epitaxially grown substrate; p+-layer; photo-sensitivity; photodiode; vertical over-flow-drain; Charge coupled devices; Charge-coupled image sensors; Digital cameras; Image sensors; Impurities; Laboratories; National electric code; Pixel; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
