Optimization of Parameters for TVS breakdown voltage: Design and Fabrication

Author

Tzu-Lang Shih ; Wen-Hsi Lee

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

3

Abstract

The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

Keywords

Zener diodes; bipolar transistors; semiconductor device breakdown; BJT structure; NPN transistor; TVS breakdown voltage; TVS design; TVS fabrication; Zener diode; high device capacitance; low junction capacitance; parameter optimization; transient voltage suppressor devices; Capacitance; Clamps; Electrostatic discharges; Fabrication; Junctions; Semiconductor process modeling; BJT; Diode; ESD; TCAD; TVS (Transient Voltage Suppressor); Zener;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940007

Filename

6940007