Title :
Optimization of Parameters for TVS breakdown voltage: Design and Fabrication
Author :
Tzu-Lang Shih ; Wen-Hsi Lee
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
June 26 2014-July 4 2014
Abstract :
The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.
Keywords :
Zener diodes; bipolar transistors; semiconductor device breakdown; BJT structure; NPN transistor; TVS breakdown voltage; TVS design; TVS fabrication; Zener diode; high device capacitance; low junction capacitance; parameter optimization; transient voltage suppressor devices; Capacitance; Clamps; Electrostatic discharges; Fabrication; Junctions; Semiconductor process modeling; BJT; Diode; ESD; TCAD; TVS (Transient Voltage Suppressor); Zener;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940007
