Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX

FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin´s scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.