Title :
The effect of strain on carrier mobility
Author :
Prussin, Simon A. ; Joshi, Akanksha
Author_Institution :
Active Layer Parametrics, Inc., Los Angeles, CA, USA
fDate :
June 26 2014-July 4 2014
Abstract :
Advanced devices require knowledge of carrier concentration, mobility and resistivity profiles as well as the effects of strain. Active Layer Parametrics, Inc.´s Differential Hall Effect Method (DHE) represents a technique to directly measure these parameters as well as the effects of strain from high dopant concentrations and group IV impurities.
Keywords :
Hall effect devices; carrier density; carrier mobility; semiconductor doping; DHE; active layer parametrics; carrier concentration; carrier mobility; differential hall effect method; group IV impurities; high dopant concentrations; resistivity profiles; strain effect; Boron; Conductivity; Implants; Junctions; Semiconductor device measurement; Silicon; Strain; Direct mobility measurement; Strain enhancement of mobility;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940012
