Title :
Determining defect & strain effects on active layer mobility
Author :
Joshi, Akanksha ; Prussin, Simon A.
Author_Institution :
Active Layer Parametrics Inc., Los Angeles, CA, USA
fDate :
June 26 2014-July 4 2014
Abstract :
Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.´s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.
Keywords :
carrier density; ion implantation; ASTM standard F723; Active Layer Parametrics Inc; DHE data; active layer mobility; carrier concentration; defect analysis; defect effects; differential hall effect method; doped silicon materials; fully relaxed systems; ion implantation; mobility profiles; strain effects; Annealing; Implants; Scattering; Silicon; Strain; Strain measurement; Complete analysis of Activated Layers; Strain-Effects and Defect Analysis;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940013
