• DocumentCode
    136152
  • Title

    Determining defect & strain effects on active layer mobility

  • Author

    Joshi, Akanksha ; Prussin, Simon A.

  • Author_Institution
    Active Layer Parametrics Inc., Los Angeles, CA, USA
  • fYear
    2014
  • fDate
    June 26 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.´s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.
  • Keywords
    carrier density; ion implantation; ASTM standard F723; Active Layer Parametrics Inc; DHE data; active layer mobility; carrier concentration; defect analysis; defect effects; differential hall effect method; doped silicon materials; fully relaxed systems; ion implantation; mobility profiles; strain effects; Annealing; Implants; Scattering; Silicon; Strain; Strain measurement; Complete analysis of Activated Layers; Strain-Effects and Defect Analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology (IIT), 2014 20th International Conference on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/IIT.2014.6940013
  • Filename
    6940013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136152