DocumentCode :
1361553
Title :
Increasing emission current from MIM cathodes by using an Ir-Pt-Au multilayer top electrode
Author :
Kusunoki, Toshiaki ; Suzuki, Mutsumi
Author_Institution :
Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
47
Issue :
8
fYear :
2000
fDate :
8/1/2000 12:00:00 AM
Firstpage :
1667
Lastpage :
1672
Abstract :
We investigated the effect of the top electrode materials on the electron emission and durability of metal-insulator-metal (MIM) cathodes. The durability is improved when high sublimation-enthalpy material, such as Ir, Mo, or W, are used; however, the emission current, and the transfer ratio, decrease. The material dependence of the transfer ratio is shown to be dominated by the scattering probability of hot electrons in the metal. The scattering probability was estimated from the metal´s density-of-states, or more simply, from the number of d-electrons. We found that the multilayer top electrode consisting of Ir, Pt, and Au provides the best top electrode combination for MIM cathodes. The high sublimation-enthalpy Ir layer, which is in contact with the insulator, acts as a barrier metal and improves the durability, whereas the surface Au layer maintains the transfer ratio at a high value. With this top electrode structure, emission current density is increased to 5.8 mA/cm2, which is sufficient for field-emission displays. We demonstrated a display consisting of a 30×30-dot MIM cathode-array with the multilayer top electrodes
Keywords :
MIM devices; cathodes; current density; field emission displays; gold; hot carriers; iridium; multilayers; platinum; Ir layer barrier metal; Ir-Pt-Au; Ir-Pt-Au multilayer top electrode; MIM cathode-array; MIM cathodes; density-of-states; durability; electron emission; emission current; field-emission displays; high sublimation-enthalpy material; hot electrons; scattering probability; surface Au layer; top electrode materials; transfer ratio material dependence; Cathodes; Electrodes; Electron emission; Flat panel displays; Gold; Inorganic materials; Insulation; Metal-insulator structures; Nonhomogeneous media; Scattering;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.853046
Filename :
853046
Link To Document :
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