Plasma doping (PLAD) for advanced memory device manufacturing

Author

Shu Qin

Author_Institution

Micron Technol. Inc., Boise, ID, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

6

Abstract

PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, I present developments of PLAD on both planar and non-planar 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase on planar devices, and 23% series resistance reduction, 25% drive current increase on non-planar 3D devices.

Keywords

DRAM chips; integrated circuit manufacture; plasma immersion ion implantation; semiconductor doping; three-dimensional integrated circuits; 3D structure doping capability; BL; PLAD; advanced memory device manufacturing; beam-line based implants; contact resistance reduction; nonplanar 3D device structures; planar 3D device structures; plasma doping; production enhancement; series resistance reduction; trench transistor 3D DRAM; Doping; Implants; Junctions; Plasmas; Silicon; Three-dimensional displays; Transistors; FinFET; Plasma doping; planar and non-planar device doping; trench transistor 3D DRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940017

Filename

6940017