A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET´s

Author

Shirokov, Mikhail S. ; Leoni, Robert E., III ; Bao, Jianwen ; Hwang, James C M

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1680

Lastpage

1681

Abstract

A transient SPICE model, which was previously developed for epitaxial GaAs MESFET´s, was modified for ion-implanted GaAs MESFET´s. The model accounts for both trapping and detrapping effects hence can simulate both low-frequency dispersion and gate-lag characteristics. The model was experimentally verified in terms of pulsed current-voltage (I-V) characteristics and digitally modulated RF carrier waveforms

Keywords

III-V semiconductors; SPICE; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device models; transient analysis; transient response; GaAs; detrapping effects; digitally modulated RF carrier waveforms; digitally modulated RF characteristics; gate-lag characteristics; ion-implanted GaAs MESFET; low-frequency dispersion; pulsed I-V characteristic; pulsed current-voltage characteristics; transient SPICE model; trapping effects; Current measurement; Digital modulation; Gallium arsenide; MESFETs; Pulse measurements; Radio frequency; SPICE; Semiconductor process modeling; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853049

Filename

853049