Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Author

Chen, Ming-Jer ; Kang, Ting-Kuo ; Huang, Huan-Tsung ; Liu, Chuan-Hsi ; Chang, Yih J. ; Fu, Kuan-Yu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1682

Lastpage

1683

Abstract

The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by a hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift

Keywords

MOSFET; dielectric thin films; electron traps; high field effects; hot carriers; leakage currents; semiconductor device breakdown; semiconductor device measurement; tunnelling; MOSFET thin oxides; electron stress fluence; filled trap density; filled traps; forward current peak; forward gated-diode measurement; forward gated-diode monitoring technique; gate voltage shift; high-field stressed thin oxides; hot-electrons filling scheme; power law relation; Current measurement; Density measurement; Electron traps; Filling; MOSFET circuits; Monitoring; Power MOSFET; Power measurement; Stress measurement; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853050

Filename

853050