Title :
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
Author :
Chang, Chia-Ta ; Hsu, Heng-Tung ; Chang, Edward Yi ; Kuo, Chien-I ; Huang, Jui-Chien ; Lu, Chung-Yu ; Miyamoto, Yasuyuki
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 ????mm and a low gate leakage current of 0.9 ??A/mm when biased at VGS = -3 V and VDS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; microwave field effect transistors; semiconductor device noise; wide band gap semiconductors; GaN-AlGaN-GaN; frequency 30 GHz; gain 5 dB; gate-recessed HEMT; high-electron mobility transistor; low gate leakage current; low-noise performance; low-noise properties; noise figure 1.6 dB; ohmic-contact resistance; size 100 nm; voltage -3 V; voltage 10 V; AlGaN/GaN; high-electron mobility transistor (HEMT); noise figure; recessed gate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2037167
