DocumentCode :
1361654
Title :
Solid state: Fast electron-beam lithography: High blanking speeds may make this new system a serious challenger in producing submicrometer ICs
Author :
Eidson, John C.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Volume :
18
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
24
Lastpage :
28
Abstract :
Electron-beam lithography may become competitive with optical methods for making integrated circuits. The step that could make this possible is an electron-beam lithography system developed at Hewlett-Packard that is potentially many times faster than previous machines for making ICs through direct writing on wafers or generating high-precision masks. The Hewlett-Packard system has a beam spot-corresponding to the smallest pixel that can be written-with a diameter that can be varied from 0.5 to 0.25 μm.
Keywords :
electron beam lithography; integrated circuit manufacture; 300 MHz blanking rate; beam spot; electron-beam lithography system; integrated circuits; Blanking; Electron beams; Lenses; Lithography; Resists; Substrates; Throughput;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1981.6369754
Filename :
6369754
Link To Document :
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