VIISta 900 3D: Advanced medium current implanter

Author

Sinclair, Frank ; Olson, Joe ; Rodier, Dennis ; Eidukonis, Alex ; Thanigaivelan, T. ; Todorov, Stan

Author_Institution

Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materials has enhanced the design of the industry´s leading medium current implanter to meet the production requirements of advanced technology nodes. Improvements to the implanter architecture include more precise angle control, increased beam utilization, better uniformity and repeatability and longer maintenance intervals. Advanced ion optics allow measurement and control of beam shape.

Keywords

ion implantation; 3D device architectures; VIISta 900 3D; advanced medium current implanter; advanced technology nodes; applied materials; beam shape control; beam utilization; implanter architecture; ion implantation; precise angle control; semiconductor technology; varian semiconductor equipment business unit; Current measurement; Implants; Insulators; Magnetic flux; Magnetic separation; Particle beams; Three-dimensional displays; Dose Control; Implant Angles; Precision;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940037

Filename

6940037