DocumentCode :
1361828
Title :
Transient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver
Author :
Chen, Gang ; Han, Dan ; Mei, Yun-Hui ; Cao, Xiao ; Wang, Tao ; Chen, Xu ; Lu, Guo-Quan
Author_Institution :
Sch. of Chem. Eng. & Technol., Tianjin Univ., Tianjin, China
Volume :
12
Issue :
1
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
124
Lastpage :
132
Abstract :
Recently, to accurately study the transient thermal behavior of power modules, a transient thermal measurement system was developed to investigate the transient thermal behavior of insulated-gate bipolar transistor (IGBT) modules attached by nanosilver paste and two kinds of lead-free solders. We found that the transient thermal impedance of IGBT modules attached by nanosilver paste was 9% lower than that of the modules using SAC305 and SN100C with 40-ms heating pulse. In addition, finite-element analysis is employed to simulate thermal performance of the IGBT devices. The simulation shows that the transient thermal impedance of IGBT modules attached by nanosilver paste was also lower than that of the modules using lead-free solders. A convenient way was introduced to well predict the transient thermal behavior of IGBT power module. The calculated results agreed well with the measured one. The interface thermal impedance of sintered nanosilver and SNC100C are calculated to be 0.011 ~ 0.031 K/W and 0.022 ~ 0.042 K/W, respectively.
Keywords :
finite element analysis; insulated gate bipolar transistors; modules; nanoelectronics; nanostructured materials; silver; sintering; transient analysis; IGBT devices; IGBT power modules; SAC305; SN100C; SNC100C; finite element analysis; heating pulse; insulated-gate bipolar transistor modules; interface thermal impedance; lead-free solders; low-temperature sintered nanosilver; nanosilver paste; transient thermal behavior; transient thermal impedance; transient thermal measurement system; transient thermal performance; Conductivity; Heating; Impedance; Insulated gate bipolar transistors; Temperature measurement; Thermal conductivity; Transient analysis; Die attach; insulated-gate bipolar transistor (IGBT); low-temperature sintering; nanosilver; power module; transient thermal impedance;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2011.2173573
Filename :
6060900
Link To Document :
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