Transient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver

Author

Chen, Gang ; Han, Dan ; Mei, Yun-Hui ; Cao, Xiao ; Wang, Tao ; Chen, Xu ; Lu, Guo-Quan

Author_Institution

Sch. of Chem. Eng. & Technol., Tianjin Univ., Tianjin, China

Volume

12

Issue

1

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

124

Lastpage

132

Abstract

Recently, to accurately study the transient thermal behavior of power modules, a transient thermal measurement system was developed to investigate the transient thermal behavior of insulated-gate bipolar transistor (IGBT) modules attached by nanosilver paste and two kinds of lead-free solders. We found that the transient thermal impedance of IGBT modules attached by nanosilver paste was 9% lower than that of the modules using SAC305 and SN100C with 40-ms heating pulse. In addition, finite-element analysis is employed to simulate thermal performance of the IGBT devices. The simulation shows that the transient thermal impedance of IGBT modules attached by nanosilver paste was also lower than that of the modules using lead-free solders. A convenient way was introduced to well predict the transient thermal behavior of IGBT power module. The calculated results agreed well with the measured one. The interface thermal impedance of sintered nanosilver and SNC100C are calculated to be 0.011 ~ 0.031 K/W and 0.022 ~ 0.042 K/W, respectively.

Keywords

finite element analysis; insulated gate bipolar transistors; modules; nanoelectronics; nanostructured materials; silver; sintering; transient analysis; IGBT devices; IGBT power modules; SAC305; SN100C; SNC100C; finite element analysis; heating pulse; insulated-gate bipolar transistor modules; interface thermal impedance; lead-free solders; low-temperature sintered nanosilver; nanosilver paste; transient thermal behavior; transient thermal impedance; transient thermal measurement system; transient thermal performance; Conductivity; Heating; Impedance; Insulated gate bipolar transistors; Temperature measurement; Thermal conductivity; Transient analysis; Die attach; insulated-gate bipolar transistor (IGBT); low-temperature sintering; nanosilver; power module; transient thermal impedance;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2173573

Filename

6060900