Title :
Analysis of Main Degradation in Lasers With p-/n-Type InP Buried Layers Using OBIC Technique
Author :
Takeshita, Tatsuya ; Ishii, Hiroyuki
Author_Institution :
Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
3/1/2012 12:00:00 AM
Abstract :
The main degradation of the t0.5 deterioration property (second-stage degradation) in lasers during constant-power aging is investigated by using the optical beam-induced current technique. We clarify that defects that cause this second-stage degradation diffuse mainly from around the regrown interface of the p-type InP cladding layer above the active layer to the active layer via the separate confinement heterostructure layer.
Keywords :
III-V semiconductors; OBIC; ageing; failure analysis; indium compounds; laser reliability; quantum well lasers; InP; OBIC; cladding layer; confinement heterostructure; constant-power aging; degradation; optical beam-induced current; quantum well lasers; second-stage degradation; t0.5 deterioration property; Aging; Degradation; Distributed feedback devices; Indium phosphide; Measurement by laser beam; Wavelength measurement; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum well lasers; semiconductor lasers;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2173496
