DocumentCode
136185
Title
Power and analog devices trends, challenges: Implant and thermal processing applications
Author
Kuroi, Takashi
Author_Institution
Renesas Semicond. Manuf. Co., Ltd., Itami, Japan
fYear
2014
fDate
June 26 2014-July 4 2014
Firstpage
1
Lastpage
4
Abstract
Power devices contribute to the building of a smart community in which people and the planet can coexist in prosperity. Analog and sensing devices as input and output interface to microcomputer provide total systems appropriate to expand smart solutions. Relatively matured process technology was used to fabricate these devices. However unique process techniques have recently been utilized to improve the performance of these devices. Especially, an increasing amount of attention has been devoted to ion implantation and annealing technology, since junction formation is the most important technology that can determine the device performance. In this paper, I will report on the technology trends, the current issues and some solutions to overcome these for power and analog devices.
Keywords
annealing; ion implantation; power semiconductor devices; thermal engineering; analog devices; annealing technology; ion implantation; junction formation; matured process technology; microcomputer; power devices; sensing devices; smart power ICs; thermal processing; Annealing; CMOS image sensors; Gallium nitride; Ion implantation; Junctions; Performance evaluation; Silicon; CMOS image sensor; annealing; ion implantation; mixed signal devices; power device;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/IIT.2014.6940046
Filename
6940046
Link To Document