• DocumentCode
    136185
  • Title

    Power and analog devices trends, challenges: Implant and thermal processing applications

  • Author

    Kuroi, Takashi

  • Author_Institution
    Renesas Semicond. Manuf. Co., Ltd., Itami, Japan
  • fYear
    2014
  • fDate
    June 26 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Power devices contribute to the building of a smart community in which people and the planet can coexist in prosperity. Analog and sensing devices as input and output interface to microcomputer provide total systems appropriate to expand smart solutions. Relatively matured process technology was used to fabricate these devices. However unique process techniques have recently been utilized to improve the performance of these devices. Especially, an increasing amount of attention has been devoted to ion implantation and annealing technology, since junction formation is the most important technology that can determine the device performance. In this paper, I will report on the technology trends, the current issues and some solutions to overcome these for power and analog devices.
  • Keywords
    annealing; ion implantation; power semiconductor devices; thermal engineering; analog devices; annealing technology; ion implantation; junction formation; matured process technology; microcomputer; power devices; sensing devices; smart power ICs; thermal processing; Annealing; CMOS image sensors; Gallium nitride; Ion implantation; Junctions; Performance evaluation; Silicon; CMOS image sensor; annealing; ion implantation; mixed signal devices; power device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology (IIT), 2014 20th International Conference on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/IIT.2014.6940046
  • Filename
    6940046