Power amplifier performance and modelling of one-emitter-finger GaAlAs/GaAs heterojunction bipolar transistor

Author

Andrieux, L. ; Cazarre, A. ; Bailbe, J.P. ; Marty, A.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

143

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

352

Lastpage

356

Abstract

A physically based, large-signal HBT model is presented accounting for self-heating effects by way of a thermal circuit representing the thermal resistance of the power device. The model is validated by comparison with the experimental DC characteristics, S-parameter measurements under small-signal operation and output power measurements at 2 GHz under large-signal operation. The authors focus on the HBT frequency performance being measured using both probes and bond pads

Keywords

III-V semiconductors; S-parameters; UHF bipolar transistors; UHF power amplifiers; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; thermal analysis; thermal resistance; 2 GHz; DC characteristics; GaAlAs-GaAs; HBT frequency performance; S-parameter measurements; UHF HBT; heterojunction bipolar transistor; large-signal HBT model; one-emitter-finger HBT; output power measurements; physically based HBT model; power amplifier performance; power device; self-heating effects; thermal circuit; thermal resistance;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19960568

Filename

561134