Title :
Formation of Source/Drain extension by Antimony implantation for high performance DRAM peripheral transistors
Author :
Jaechun Cha ; Seungwoo Jin ; Anbae Lee ; Hun-Sung Lee ; Dongseok Kim ; Jihwan Park ; Ilsik Jang ; Ahyoung Oh ; Se-Aug Jang ; Seoungjin Yeom ; Sungki Park ; Cho, Chuhyun ; Hwang, Sunyong ; Jongwon Park ; Sungho Jo
Author_Institution :
SK hynix, Icheon, South Korea
fDate :
June 26 2014-July 4 2014
Abstract :
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than Arsenic, even though junction depth is 25% shallower. Electrical behaviors of Sorce/Drain extension implanted with Sb show 10% improvement of Ion/Ioff characteristics without degradation of drain-induced barrier lowering compared to the As.
Keywords :
DRAM chips; annealing; antimony; elemental semiconductors; ion implantation; secondary ion mass spectroscopy; silicon; transmission electron microscopy; 4-point probe; DRAM peripheral transistors; SIMS; Si:Sb; TEM; crystalline defect; dopant distribution; drain-induced barrier lowering; ion implantation; secondary ion mass spectroscopy; sheet resistance; source-drain extension; transmission electron microscopy; Annealing; Ions; Junctions; Random access memory; Resistance; Silicon; Transistors; Antimony; Source/Drain Extension;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940047
