Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device

Author

Falk, Scott ; Youn-Ki Kim ; Kaspareit, Reiner ; Colombeau, B. ; Ritterhaus, Yves ; Holtmeier, Henning ; Lamaack, Marcel

Author_Institution

Appl. Mater., Gloucester, MA, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.

Keywords

electronic engineering computing; ion implantation; power MOSFET; semiconductor doping; AMAT VIISta medium current implanters; SuperScan II; center-to-edge threshold voltage variation; implant radial patterns; n-type-doped body implant; off-center patterns; p-channel power MOSFET device; software add-on programs; threshold voltage nonuniformity pattern; voltage 170 mV; voltage 250 mV; voltage 90 mV; Implants; MOSFET; Materials; Semiconductor device modeling; Semiconductor process modeling; Software; Threshold voltage; Power MOSFETs; Threshold voltage variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940048

Filename

6940048