Title :
Investigation of floating gate depletion effect on NAND FLASH reliability
Author :
Jeng-Hwa Liao ; Jung-Yi Guo ; Yu-Min Lin ; Jung-Yu Hsieh ; Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu
Author_Institution :
Macronix Int. Co. Ltd., Hsinchu, Taiwan
fDate :
June 26 2014-July 4 2014
Abstract :
Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.
Keywords :
NAND circuits; flash memories; integrated circuit reliability; ion implantation; phosphorus; FG bending minimization; FG depletion; FG height loss; FG polydepletion issue; NAND FLASH device; NAND FLASH reliability; P-IMP; cell reliability; continuous technology scaling; floating gate depletion effect; in-situ dope poly; phosphorous implantation; phosphorous out-gassing; plasma oxide; rotation times; screen oxide; size 36 nm; temperature control; Flash memories; Implants; Oxidation; Plasma temperature; Reliability; Silicon; cold implantation; floating gate; plasma oxidation; poly bending; poly loss;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940049
