• DocumentCode
    136189
  • Title

    Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

  • Author

    Nath, Asoke ; Rao, Mulpuri V. ; Moscatelli, F. ; Puzzanghera, M. ; Mancarella, F. ; Nipoti, R.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
  • fYear
    2014
  • fDate
    June 26 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
  • Keywords
    aluminium compounds; annealing; ion implantation; microwave materials processing; semiconductor diodes; silicon compounds; wide band gap semiconductors; H-SiC:Al; generation-recombination current; microwave annealed implanted p+-i-n diodes; temperature dependent current-voltage characteristics; Annealing; P-i-n diodes; Temperature dependence; Temperature distribution; Temperature measurement; 4H-SiC; Arrhenius plot; ion-implantation; p-i-n diode; recombination-generation centers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology (IIT), 2014 20th International Conference on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/IIT.2014.6940050
  • Filename
    6940050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136189