Title :
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
Author :
Nath, Asoke ; Rao, Mulpuri V. ; Moscatelli, F. ; Puzzanghera, M. ; Mancarella, F. ; Nipoti, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
June 26 2014-July 4 2014
Abstract :
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Keywords :
aluminium compounds; annealing; ion implantation; microwave materials processing; semiconductor diodes; silicon compounds; wide band gap semiconductors; H-SiC:Al; generation-recombination current; microwave annealed implanted p+-i-n diodes; temperature dependent current-voltage characteristics; Annealing; P-i-n diodes; Temperature dependence; Temperature distribution; Temperature measurement; 4H-SiC; Arrhenius plot; ion-implantation; p-i-n diode; recombination-generation centers;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940050
