Title :
Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
Author :
Wu, Yu-Sheng ; Fan, Ming-Long ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (1 eff) approach that decouples the ST variation into transition-charge (??Q) and 1 eff variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.
Keywords :
MOSFET; effective-drive-current approach; line edge roughness; nanoscale MOSFET; random dopant fluctuation; switching-time variations; threshold-voltage variation; Line edge roughness (LER); MOSFET; random dopant fluctuation (RDF); switching time (ST);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2037247
