Ultraviolet (UV) raman characterization of ultra- shallow ion implanted silicon

Author

Woo Sik Yoo ; Kitaek Kang ; Ueda, Toshitsugu ; Ishigaki, Toshikazu ; Nishigaki, Hiroshi ; Hasuike, Noriyuki ; Harima, Hiroshi ; Yoshimoto, Masahiko

Author_Institution

WaferMasters, Inc., San Jose, CA, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

Ion implant damage to the Si lattice was investigated using ultraviolet (UV) Raman spectroscopy under two UV excitation wavelengths (266.0 and 363.8 nm) with probing depths of ~2 and ~5nm into the surface. Ultra-shallow implantation of B⁺ and BF₂⁺ ions with and without Ge pre-amorphization implantation (PAI) into 300mm diameter n-type Si(100) wafers were prepared. Raman peak broadening and shape change, corresponding to the degree and depth of ion implantation damage to the Si lattice, were measured. Changes of reflectance spectra in the UV and visible wavelength region caused by the ultra-shallow ion implantation were measured and correlated with Si lattice damage evaluated by UV Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscopy (HRXTEM). UV Raman spectroscopy is a very promising non-contact Si lattice damage characterization technique for ultra-shallow ion implanted Si and can be used as an in-line damage and electrical activation monitoring technique.

Keywords

Raman spectra; amorphisation; boron; boron compounds; elemental semiconductors; germanium; ion implantation; lattice constants; reflectivity; secondary ion mass spectra; spectral line broadening; transmission electron microscopy; ultraviolet spectra; Ge preamorphization implantation; HRXTEM; Raman peak broadening; Raman shape change; SIMS; Si:B⁺; Si:BF₂⁺; Si:Ge,B⁺; Si:Ge,BF₂⁺; UV excitation wavelengths; UV wavelength region; electrical activation monitoring technique; high resolution transmission electron microscopy; ion implant damage; n-type Si(100) wafers; noncontact Si lattice damage characterization; probing depths; reflectance spectra; secondary ion mass spectra; size 300 mm; ultrashallow ion implanted silicon; ultraviolet Raman spectra; visible wavelength region; wavelength 266.0 nm; wavelength 363.8 nm; Implants; Junctions; Lattices; Raman scattering; Reflectivity; Silicon; Wavelength measurement; Raman spectroscopy; high resolution ion mass spectroscopy (HRXTEM); ion implantation; reflectance; secondary ion mass spectroscopy (SIMS); ultra-shallow junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940056

Filename

6940056