Title :
A study on Silicon Carbide (SiC) wafer using ion implantation
Author :
Weijiang Zhao ; Tobikawa, Kazuki ; Nagayama, Tsutomu ; Sakai, Shin´ichi
Author_Institution :
Nissin Ion Equip. Co., Ltd., Kyoto, Japan
fDate :
June 26 2014-July 4 2014
Abstract :
In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).
Keywords :
ion implantation; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; chucking force; high purity semi-insulating silicon carbide wafers; implant depth profile; ion beam; ion implantation effect; ion implanter IMPHEAT; physical property; plasma flood gun effect; spectroscopic analysis; Force; Implants; Ion implantation; Plasma temperature; Reflectivity; Silicon carbide; Temperature measurement; HPSI-SiC; IMPHEAT®; PFG; SiC; Silicon Carbide; ion; ion implant;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6940058
