A study on Silicon Carbide (SiC) wafer using ion implantation

Author

Weijiang Zhao ; Tobikawa, Kazuki ; Nagayama, Tsutomu ; Sakai, Shin´ichi

Author_Institution

Nissin Ion Equip. Co., Ltd., Kyoto, Japan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT^® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).

Keywords

ion implantation; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; chucking force; high purity semi-insulating silicon carbide wafers; implant depth profile; ion beam; ion implantation effect; ion implanter IMPHEAT; physical property; plasma flood gun effect; spectroscopic analysis; Force; Implants; Ion implantation; Plasma temperature; Reflectivity; Silicon carbide; Temperature measurement; HPSI-SiC; IMPHEAT^®; PFG; SiC; Silicon Carbide; ion; ion implant;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940058

Filename

6940058