Title :
Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm
Author :
Blum, O. ; Klem, J.F.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
We report data on GaAsSb single-quantum-well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 μm in a 1250-μm-long device has been observed. Minimum threshold current densities of 535 A/cm2 were measured in 2000-μm-long lasers. We also measured internal losses of 2-5 cm/sup -1/, internal quantum efficiencies of 30%-38% and characteristic temperatures T0 of 67/spl deg/C-77/spl deg/C. From these parameters, a gain constant G0 of 1660 cm/sup -1/ and a transparency current density J/sub tr/ of 134 A/cm2 were calculated. The results indicate the potential for fabricating 1.3-μm vertical-cavity surface-emitting lasers from these materials.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; laser variables measurement; molecular beam epitaxial growth; optical fabrication; optical losses; optical pulse generation; quantum well lasers; surface emitting lasers; transparency; 1.275 mum; 1.3 mum; 1250 mum; 2000 mum; 298 K; 30 to 38 percent; 67 to 77 C; GaAs; GaAs substrates; GaAsSb; characteristic temperatures; fabrication; gain constant; internal losses; internal quantum efficiencies; minimum threshold current densities; room temperature pulsed emission; single-quantum-well-lasers; transparency current density; vertical-cavity surface-emitting lasers; Current density; Current measurement; Density measurement; Gallium arsenide; Loss measurement; Optical materials; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
