Title :
Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates
Author :
Yamada, M. ; Anan, T. ; Tokutome, K. ; Kamei, A. ; Nishi, K. ; Sugou, S.
Author_Institution :
Optical Interconnection Lab., NEC Corp., Japan
fDate :
7/1/2000 12:00:00 AM
Abstract :
GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing a multi-QW to increase the gain. As a result, 1.27-μm lasing of a GaAs/sub 0.66/Sb/sub 0.34/-GaAs double-QW laser was obtained with a low-threshold current density of 440 A/cm2, which is comparable to that in conventional InP-based long-wavelength lasers. 1.30 μm lasing with a threshold current density of 770 A/cm2 was also obtained by increasing the antimony content to 0.36. GaAsSb QW was found to be a suitable material for use in the active layer of a 1.3-μm vertical-cavity surface-emitting lasers.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; optical fabrication; optimisation; photoluminescence; quantum well lasers; surface emitting lasers; 1.27 mum; 1.3 mum; GaAs; GaAs substrate; GaAs substrates; GaAs/sub 0.66/Sb/sub 0.34/-GaAs; GaAs/sub 0.66/Sb/sub 0.34/-GaAs double-quantum well laser; GaAsSb; GaAsSb quantum well; GaAsSb quantum-well lasers; InP-based long-wavelength lasers; Sb content; active layer; edge-emitting lasers; gain; growth conditions; lasing; low-threshold current density; low-threshold operation; multi-quantum well; optical quality; threshold current density; vertical-cavity surface-emitting lasers; Gallium arsenide; Optical materials; Optical surface waves; Optical transmitters; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
