High-power broad-band superluminescent diode with low spectral modulation at 1.5-μm wavelength

Author

Song, Jong Hyun ; Cho, S.H. ; Han, I.K. ; Hu, Y. ; Heim, P.J.S. ; Johnson, F.G. ; Stone, D.R. ; Dagenais, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

Volume

12

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

783

Lastpage

785

Abstract

A 1.5-μm wavelength superluminescent light source operating at a heat sink temperature of 13/spl deg/C with the following properties was realized: 20-mW continuous wave output power, 130-nm spectral bandwidth, and 0.2-dB spectral modulation. This light source consists of an angled facet single-mode waveguide with a rear absorption region. These results were obtained by optimizing the epitaxial design, the waveguide design, and the device mounting.

Keywords

light sources; molecular beam epitaxial growth; optical design techniques; optical fabrication; optical modulation; optical waveguide components; quantum well devices; ridge waveguides; superluminescent diodes; 1.5 mum; 13 C; 20 mW; InGaAsP; angled facet single-mode waveguide; continuous wave output power; device mounting; epitaxial design; heat sink temperature; high-power broad-band superluminescent diode; light source; rear absorption region; spectral bandwidth; spectral modulation; superluminescent light source; waveguide design; Absorption; Bandwidth; Design optimization; Heat sinks; Light emitting diodes; Light sources; Optical modulation; Power generation; Superluminescent diodes; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.853499

Filename

853499