Title :
Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
Author :
Guina, M. ; Orsila, S. ; Dumitrescu, M. ; Saarinen, M. ; Sipila, P. ; Vilokkinen, V. ; Roycroft, B. ; Uusimaa, P. ; Toivonen, M. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fDate :
7/1/2000 12:00:00 AM
Abstract :
State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED´s) emitting at 650 nm. 84-μm size epoxy coated RCLED´s have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.
Keywords :
cavity resonators; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; optical fabrication; optical fibre communication; optical modulation; optical resonators; optical transfer function; quantum well devices; 1.4 mW; 15 mum; 150 MHz; 200 MHz; 3.25 mW; 40 mA; 622 Mbit/s; 650 nm; 70 mA; 84 mum; CW output power; SONET OC-12; bandwidth; data communication links; epoxy coated resonant cavity light emitting diode; light-emitting diode; modulation bandwidths; multiquantum well resonant cavity light emitting diodes; open eye-diagram; output power; small signal modulation bandwidth; small-signal modulation bandwidth; state-of-the-art modulation bandwidths; Bandwidth; Costs; Data communication; Light emitting diodes; Optical coupling; Optical fibers; Optical modulation; Resonance; Semiconductor diodes; Transfer functions;
Journal_Title :
Photonics Technology Letters, IEEE
