DocumentCode :
1362081
Title :
Extension of the ADC Charge-Collection Model to Include Multiple Junctions
Author :
Edmonds, Larry D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
58
Issue :
6
fYear :
2011
Firstpage :
3333
Lastpage :
3342
Abstract :
The ADC charge-collection model was derived for silicon diodes containing a single reverse-biased p-n junction. The present paper extends the model to include two junctions, and the goal is to estimate how collected charge is shared between them. The extended model identifies the conditions needed to produce either of three possibilities. One possibility is that charge is shared by both junctions, and the total collected charge from the two junctions is less than the total amount of liberated charge. A second possibility is that collected charge is shared by both junctions, and the total collected charge from the two junctions is equal to the total amount of liberated charge. The third possibility is that all liberated charge is collected by one junction, and no charge is collected by the other. Examples show excellent agreement with TCAD simulations.
Keywords :
diffusion; p-n junctions; semiconductor device models; semiconductor diodes; silicon compounds; ADC charge-collection model; TCAD simulations; collected charge; liberated charge; multiple junctions; silicon diodes; single reverse-biased p-n junction; Analytical models; Diffusion processes; Junctions; Substrates; ADC model; ambipolar diffusion; ambipolar diffusion with a cutoff; charge collection; drift-diffusion;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2168976
Filename :
6060934
Link To Document :
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