DocumentCode :
1362093
Title :
A Quantitative Model for ELDRS and 
Degradation Effects in Irradiated Oxides Based on First Principles Calculations
Author :
Rowsey, Nicole L. ; Law, Mark E. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Tuttle, Blair R. ; Pantelides, Sokrates T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Volume :
58
Issue :
6
fYear :
2011
Firstpage :
2937
Lastpage :
2944
Abstract :
A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.
Keywords :
ab initio calculations; radiation effects; semiconductor process modelling; technology CAD (electronics); defect types; defect-related reaction energetics; degradation effect analysis; enhanced low-dose-rate sensitivity; first principles calculations; hydrogen concentrations; hydrogen degradation effects; hydrogen environments; hydrogenated defects; initial defect concentration; initial defect location; irradiated oxides; linear bipolar devices; low-dose-rate effects; molecular hydrogen; physics-based TCAD model; quantitative model; radiation response; Hydrogen; Logic gates; Mathematical model; Protons; Radiation effects; Sensitivity analysis; $N_{it}$
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2169458
Filename :
6060936
Link To Document :
