Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

Author

Wrachien, Nicola ; Cester, Andrea ; Bari, Daniele ; Kovac, Jaroslav ; Jakabovic, Jan ; Donoval, Daniel ; Meneghesso, Gaudenzio

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova, Italy

Volume

58

Issue

6

fYear

2011

Firstpage

2911

Lastpage

2917

Abstract

We irradiated Organic Thin-Film Transistors using light sources with peak wavelength in the near-UV spectrum. Organic Thin-Film Transistors have been found very sensitive to near UV rays. Irradiation generates negative trapped charge due to photogeneration, as well as neutral defects, which degrade the mobility and transconductance. We observed noticeable degradation even with 400-nm wavelength, which lies between visible and UV-light. Stronger variations were observed with the shortest wavelength, with a transconductance drop of -85% after 33000-s irradiation with 310 nm UV. We found that the mobility degradation is permanent after storing the devices in vacuum at least for 50 days.

Keywords

electric admittance; organic semiconductors; semiconductor device reliability; semiconductor thin films; thin film transistors; ultraviolet radiation effects; UV-light; light sources; mobility degradation; near UV rays; near-UV irradiation effects; near-UV spectrum; negative trapped charge; neutral defects; peak wavelength; pentacene-based organic thin film transistors; photogeneration; time 33000 s; transconductance drop; visible light; wavelength 310 nm; wavelength 400 nm; Charge carrier processes; Degradation; Organic thin film transistors; Pentacene; Radiation effects; Reliability; Organic electronic devices; reliability; thin-film-transistors; ultraviolet irradiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2170432

Filename

6060938