Title :
The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
Author :
Bordallo, C.C.M. ; Teixeira, F.F. ; Silveira, M.A.G. ; Martino, Joao Antonio ; Agopian, Paula G. D. ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.
Keywords :
MOSFET; silicon-on-insulator; ION-IOFF ratio; back conduction; interface traps; multiple-gates transistors; nMuGFET; subthreshold region characteristics; subthreshold slope shift; threshold voltage shift; triple-gate SOI FinFET parameters; x-ray radiation dose rate; Bismuth; Charge carrier processes; Geometry; Physics; Radiation effects; Back conduction; Dose rate effects; Multiple-Gate MOSFETs (MuGFETs); X-ray radiation;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940085
