A real-time C-V measurement circuit for MOS capacitors under current stressing

Author

Len Lee, Chung ; Fu Lei, Tan ; Huang Ho, Jaw ; Tong Wang, Wen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

40

Issue

4

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

775

Lastpage

777

Abstract

A real-time C-V measurement circuit for MOS capacitors which are under constant current stress is presented. For this system, the MOS device is kept current-stressed and its stressed C-V characteristics can be measured instantaneously when desired. The charge filling information on oxide traps and surface states can be obtained in real time during the stressing process, even to the point of capacitor breakdown. With this circuit it has been shown that, for an Al-gate MOS structure, charges on traps and interface surface states recover immediately after the stressing is removed. It is demonstrated that the breakdown of the oxide is a sudden phenomenon, and is caused mainly by charge trapping in the oxide

Keywords

capacitors; characteristics measurement; electric breakdown of solids; electron traps; interface electron states; metal-insulator-semiconductor devices; semiconductor device testing; Al gate; MOS capacitors; VLSI; capacitor breakdown; charge trapping; current stressing; interface; oxide traps; real-time C-V measurement circuit; surface states; waveform generator; Capacitance-voltage characteristics; Circuits; Current measurement; Fast Fourier transforms; Fourier transforms; Frequency; MOS capacitors; Piecewise linear approximation; Sampling methods; Stress measurement;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.85352

Filename

85352