• DocumentCode
    1362190
  • Title

    Reliability extrapolation model for stress-induced-leakage current in thin silicon oxides

  • Author

    Scarpa, A. ; Ghibaudo, G. ; Pananakakis, G. ; Paccagnella, A. ; Ghidini, G.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
  • Volume
    33
  • Issue
    15
  • fYear
    1997
  • fDate
    7/17/1997 12:00:00 AM
  • Firstpage
    1342
  • Lastpage
    1344
  • Abstract
    A novel reliability extrapolation model is proposed for the stress-induced-leakage current (SILC) in very thin oxides. This model relies on the assessment of power laws for the SILC degradation kinetics as a function of both injection dose and stress current density. The SILC degradation rate is found to be almost independent of stress and measuring bias polarity. The simple analytical expressions found for the degradation kinetics enable the SILC intensity to be predicted at nominal operating conditions for both constant current and constant voltage stress
  • Keywords
    extrapolation; insulating thin films; leakage currents; reliability theory; silicon compounds; SILC degradation kinetics; SiO2; power law; reliability extrapolation model; stress-induced-leakage current; thin silicon oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970877
  • Filename
    606095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1362190