Title :
Graphene for advanced devices applications
Author :
Sivieri, Victor B. ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, Joao Antonio
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
In this work, the behavior of the different types of graphene transistors in relation to the number of stacked layers are investigated as well as the influence of a palladium layer deposited on the pads of a CCVD grown graphene FET. The advantages of using this material in Tunnel FETs are also discussed. Bilayer graphene FETs with high on/off-current ratio, in the order of 106 were found. In contrast to bilayer graphene, monolayer graphene cannot be used in logical electronics applications, once that their on/off-current ratio is very low.
Keywords :
field effect transistors; graphene; tunnel transistors; CCVD grown graphene FET; advanced devices applications; bilayer graphene field effect transistor; logical electronics applications; off-current ratio; on-current ratio; palladium layer; stacked layers; tunnel FET; Electron traps; Graphene; Tunnel FET; advanced devices;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940095
