Title :
Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias
Author :
Assalti, R. ; Pavanello, Marcelo Antonio ; Flandre, Denis ; de Souza, M.
Author_Institution :
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.
Keywords :
MOSFET; electric breakdown; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; GC device; Si; breakdown voltage; front gate bias; gate voltage overdrive dependence; graded-channel FD SOl nMOSFET transistor; intrinsic voltage gain maximization; lightly doped region; optimum length dependence; unit gain frequency; MOSFET circuits; Transconductance; Graded-Channel; breakdown voltage; gate voltage overdrive; intrinsic voltage gain; unit gain frequency;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940099
