• DocumentCode
    136228
  • Title

    Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias

  • Author

    Assalti, R. ; Pavanello, Marcelo Antonio ; Flandre, Denis ; de Souza, M.

  • Author_Institution
    Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2014
  • fDate
    1-5 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.
  • Keywords
    MOSFET; electric breakdown; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; GC device; Si; breakdown voltage; front gate bias; gate voltage overdrive dependence; graded-channel FD SOl nMOSFET transistor; intrinsic voltage gain maximization; lightly doped region; optimum length dependence; unit gain frequency; MOSFET circuits; Transconductance; Graded-Channel; breakdown voltage; gate voltage overdrive; intrinsic voltage gain; unit gain frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
  • Conference_Location
    Aracaju
  • Type

    conf

  • DOI
    10.1109/SBMicro.2014.6940099
  • Filename
    6940099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136228